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RB161L-40
Diodes
Schottky barrier diode
RB161L-40
Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm)
2.0
2.60.2
Features 1) Small power mold type. (PMDS) 2) Low VF. 3) High reliability.
2.0
0.10.02 0.1
5.00.3
3
3
4.50.2
1.20.3
PMDS
1.50.2 2.00.2
Structure Construction Silicon epitaxial planar
ROHM : PMDS JEDEC : SOD-106 Manufacture Date
Taping specifications (Unit : mm)
4.00.1 2.00.05 1.550.05 1.750.1 0.3
5.50.05
1.55 2.90.1 4.00.1 2.8MAX
Absolute maximum ratings (Ta=25C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak 60Hz1cyc Junction temperautre Storage tempereature Symbol VRM VR Io IFSM Tj Tstg (*1)Mounted on epoxy board. 180Half sine wave Limits 40 20 1 70 125 -40 to +125 Unit V V A A
Electrical characteristics (Ta=25C)
Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.45 1 Unit V mA Conditions IF=1.0A VR=20V
5.30.1 0.05 9.50.1
120.2
4.2
Rev.F
1/3
RB161L-40
Diodes
Electrical characteristic curves (Ta=25C)
Ta=75 1 Ta=125 REVERSE CURRENT:IR(uA) 1000000 100000 10000 Ta=75 1000 Ta=25 100 Ta=-25 10 1 0 200 400 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 600 0 5 10 15 20 25 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS Ta=150 Ta=125 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100
FORWARD CURRENT:IF(A)
Ta=150 0.1 Ta=25 Ta=-25 0.01
10
0.001
1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
370 FORWARD VOLTAGE:VF(mV) Ta=25 IF=1A n=30pcs
500 450 REVERSE CURRENT:IR(uA) 400 350 300 250 200 150 100 50 AVE:110.4A Ta=25 VR=20V n=30pcs
300 290 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 280 270 260 250 240 230 220 210 200 AVE:251.8pF Ta=25 f=1MHz VR=0V n=10pcs
360
350
340 AVE:348.9mV 330
320 VF DISPERSION MAP
0 IR DISPERSION MAP
Ct DISPERSION MAP
150 RESERVE RECOVERY TIME:trr(ns) Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 8.3ms 100
20 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
200 Ifsm 150 8.3ms 8.3ms 1cyc
15
10
100
50 AVE:127.0A
5 AVE:9.3ns 0
50
0 IFSM DISRESION MAP
0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
200 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 150 t
1000
Mounted on epoxy board
1 0.9 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 1 10 100 1000 0 TIME:t(s) Rth-t CHARACTERISTICS 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 2 D=1/2 DC Sin(180)
100
100
10
IM=10mA
Rth(j-c)
IF=0.5A
50
1
1ms time 300us
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.01
Rev.F
2/3
RB161L-40
Diodes
50
3.0 2.5 2.0 1.5 1.0 0.5 0.0
0 10 20 30 40
3 0A 0V DC D=1/2 Io t T VR D=t/T VR=20V Tj=125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 1.5 D=1/2 1 0.5 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 125 0 25 50 75 100 CASE TEMPARATURE:0T() Derating Curve(Io-Tc) 125 Sin(180) DC 0A 0V Io t T VR D=t/T VR=20V Tj=125
30
D=1/2 DC
20
10
Sin(180)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
40
REVERSE POWER DISSIPATION:PR (W)
Sin(180)
0
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
30
No break at 30kV
25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k
AVE:12.3kV
ESD DISPERSION MAP
Rev.F
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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